SI7495DP-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: DPAK (TO-252) - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications: - Voltage Rating: 30V - Continuous Drain Current: 42A - On-Resistance: 4.5mΩ - Gate Charge: 18nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for efficient operation - Enhanced thermal performance for reliability

Advantages and Disadvantages: - Advantages: - High efficiency - Low power dissipation - Compact package size - Disadvantages: - Limited voltage rating - Sensitive to overvoltage conditions

Working Principles: The SI7495DP-T1-GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. When a sufficient gate voltage is applied, the MOSFET switches on, allowing current to flow with minimal resistance.

Detailed Application Field Plans: - Power Supplies: Efficient power conversion - Motor Control: Fast switching for motor drive applications - LED Lighting: Dimming and control circuits - Battery Management: Power switching and protection

Detailed and Complete Alternative Models: - Infineon IPP042N03L G - Vishay Si7157DP

This comprehensive entry provides an in-depth understanding of the SI7495DP-T1-GE3 Power MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.