SIHH14N60E-T1-GE3

Product Overview

Category

The SIHH14N60E-T1-GE3 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

• High voltage capability
• Low gate charge
• Fast switching speed
• Low on-resistance

Package

The SIHH14N60E-T1-GE3 comes in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power loads in electronic systems.

Packaging/Quantity

The SIHH14N60E-T1-GE3 is typically packaged in reels with a quantity of 800 units per reel.

Specifications

• Drain-Source Voltage (VDS): 600V
• Continuous Drain Current (ID): 14A
• On-Resistance (RDS(ON)): 0.45Ω
• Power Dissipation (PD): 150W
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low gate charge enables fast switching, reducing power loss.
• Fast switching speed enhances efficiency in power conversion circuits.

Advantages

• Suitable for high-voltage applications
• Low on-resistance minimizes power dissipation
• Fast switching speed improves overall system efficiency

Disadvantages

• May require additional circuitry for driving the gate due to high voltage capability
• Sensitivity to static electricity requires careful handling during assembly

Working Principles

The SIHH14N60E-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is commonly used in: - Switching power supplies - Motor control circuits - Inverters and converters - Electronic ballasts

Detailed and Complete Alternative Models

• IRFP460: Similar high-voltage MOSFET with TO-247 package
• STP16NF06: Lower voltage MOSFET with similar characteristics for low-power applications
• FQP27P06: Complementary P-channel MOSFET for specific circuit requirements

In conclusion, the SIHH14N60E-T1-GE3 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power control applications.

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