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SQJ200EP-T1_GE3
Product Overview
Category
The SQJ200EP-T1_GE3 belongs to the category of electronic components, specifically a power MOSFET.
Use
It is used as a switching device in various electronic circuits and applications, such as power supplies, motor control, and lighting systems.
Characteristics
- High voltage capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Robust packaging for thermal management
Package
The SQJ200EP-T1_GE3 is typically available in a TO-263-3 package.
Essence
The essence of this product lies in its ability to efficiently control and switch high power levels in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes and is available in quantities suitable for both prototyping and production purposes.
Specifications
- Maximum Drain-Source Voltage: [specification]
- Continuous Drain Current: [specification]
- On-State Resistance: [specification]
- Gate-Source Threshold Voltage: [specification]
- Total Gate Charge: [specification]
- Operating Temperature Range: [specification]
Detailed Pin Configuration
The SQJ200EP-T1_GE3 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)
Functional Features
- High voltage capability allows for use in a wide range of applications
- Low on-state resistance minimizes power loss and improves efficiency
- Fast switching speed enables rapid control of power flow
- Low gate charge reduces drive requirements and enhances performance
Advantages
- Excellent high-voltage performance
- Low power dissipation
- Enhanced efficiency in power conversion applications
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly and usage
Working Principles
The SQJ200EP-T1_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SQJ200EP-T1_GE3 is well-suited for use in: - Switch-mode power supplies - Motor drive circuits - Lighting systems - Renewable energy applications
Detailed and Complete Alternative Models
Some alternative models to the SQJ200EP-T1_GE3 include: - IRF540N - FQP30N06L - STP55NF06L
In conclusion, the SQJ200EP-T1_GE3 is a versatile power MOSFET with excellent high-voltage capabilities, low on-state resistance, and fast switching speed. Its robust packaging and functional features make it suitable for a wide range of electronic applications, while alternative models provide flexibility in design and implementation.
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What is the maximum operating temperature of SQJ200EP-T1_GE3?
- The maximum operating temperature of SQJ200EP-T1_GE3 is 150°C.
What is the typical forward voltage of SQJ200EP-T1_GE3?
- The typical forward voltage of SQJ200EP-T1_GE3 is 0.45V at 10A.
What is the reverse recovery time of SQJ200EP-T1_GE3?
- The reverse recovery time of SQJ200EP-T1_GE3 is typically 35ns.
What is the maximum continuous forward current of SQJ200EP-T1_GE3?
- The maximum continuous forward current of SQJ200EP-T1_GE3 is 200A.
What are the typical applications for SQJ200EP-T1_GE3?
- SQJ200EP-T1_GE3 is commonly used in motor control, power supplies, and inverters.
What is the package type of SQJ200EP-T1_GE3?
- SQJ200EP-T1_GE3 comes in a TO-263-7L package.
Does SQJ200EP-T1_GE3 have built-in protection features?
- Yes, SQJ200EP-T1_GE3 has built-in overcurrent protection and thermal shutdown features.
What is the typical junction-to-case thermal resistance of SQJ200EP-T1_GE3?
- The typical junction-to-case thermal resistance of SQJ200EP-T1_GE3 is 0.5°C/W.
Is SQJ200EP-T1_GE3 RoHS compliant?
- Yes, SQJ200EP-T1_GE3 is RoHS compliant.
What is the recommended storage temperature range for SQJ200EP-T1_GE3?
- The recommended storage temperature range for SQJ200EP-T1_GE3 is -55°C to 175°C.