Toshiba Semiconductor and Storage
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TK14G65W,RQ
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TK14G65W,RQ

MOSFET N-CH 650V 13.7A D2PAK
Numero ng Bahagi
TK14G65W,RQ
Manufacturer/Brand
Toshiba Semiconductor and Storage
Serye
DTMOSIV
Katayuan ng Bahagi
Active
Packaging
Cut Tape (CT)
Teknolohiya
MOSFET (Metal Oxide)
Operating Temperatura
150°C (TJ)
Uri ng Pag-mount
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Supplier ng Device
D2PAK
Power Dissipation (Max)
130W (Tc)
Uri ng FET
N-Channel
Tampok ng FET
-
Alisan ng tubig sa Source Voltage (Vdss)
650V
Kasalukuyan - Patuloy na Drain (Id) @ 25�C
13.7A (Ta)
Rds On (Max) @ Id, Vgs
250 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 300V
Boltahe ng Drive (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
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