Toshiba Semiconductor and Storage
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TK25N60X,S1F
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TK25N60X,S1F

MOSFET N-CH 600V 25A TO-247
Numero ng Bahagi
TK25N60X,S1F
Manufacturer/Brand
Toshiba Semiconductor and Storage
Serye
DTMOSIV-H
Katayuan ng Bahagi
Active
Packaging
Tube
Teknolohiya
MOSFET (Metal Oxide)
Operating Temperatura
150°C (TJ)
Uri ng Pag-mount
Through Hole
Package / Case
TO-247-3
Package ng Supplier ng Device
TO-247
Power Dissipation (Max)
180W (Tc)
Uri ng FET
N-Channel
Tampok ng FET
-
Alisan ng tubig sa Source Voltage (Vdss)
600V
Kasalukuyan - Patuloy na Drain (Id) @ 25�C
25A (Ta)
Rds On (Max) @ Id, Vgs
125 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 300V
Boltahe ng Drive (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Humiling ng Quote
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