Toshiba Semiconductor and Storage
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TK35N65W,S1F
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TK35N65W,S1F

MOSFET N-CH 650V 35A TO-247
Numero ng Bahagi
TK35N65W,S1F
Manufacturer/Brand
Toshiba Semiconductor and Storage
Serye
DTMOSIV
Katayuan ng Bahagi
Active
Packaging
Tube
Teknolohiya
MOSFET (Metal Oxide)
Operating Temperatura
150°C (TJ)
Uri ng Pag-mount
Through Hole
Package / Case
TO-247-3
Package ng Supplier ng Device
TO-247
Power Dissipation (Max)
270W (Tc)
Uri ng FET
N-Channel
Tampok ng FET
-
Alisan ng tubig sa Source Voltage (Vdss)
650V
Kasalukuyan - Patuloy na Drain (Id) @ 25�C
35A (Ta)
Rds On (Max) @ Id, Vgs
80 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
4100pF @ 300V
Boltahe ng Drive (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Humiling ng Quote
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Sa Stock 5064 PCS
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